Transistors are made from semiconductors. These are materials, such as silicon or germanium, that are “doped” (have minute amounts of foreign elements added) so that either an abundance or a lack of free electrons exists. In the former case, the semiconductor is called n-type, and in the latter case, p-type. By combining n-type and p-type materials, a diode can be produced. When this diode is connected to a battery so that the p-type material is positive and the n-type negative, electrons are repelled from the negative battery terminal and pass unimpeded to the p-region, which lacks electrons. With battery reversed, the electrons arriving in the p-material can pass only with difficulty to the n-material, which is already filled with free electrons, and the current is almost zero.
The bipolar transistor was invented in 1948 as a replacement for the triode vacuum tube. It consists of three layers of doped material, forming two p-n (bipolar) junctions with configurations of p-n-p or n-p-n. One junction is connected to a battery so as to allow current flow (forward bias), and the other junction has a battery connected in the opposite direction (reverse bias). If the current in the forward-biased junction is varied by the addition of a signal, the current in the reverse-biased junction of the transistor will vary accordingly. The principle can be used to construct amplifiers in which a small signal applied to the forward-biased junction causes a large change in current in the reverse-biased junction.
Another type of transistor is the field-effect transistor (FET). Such a transistor operates on the principle of repulsion or attraction of charges due to a superimposed electric field. Amplification of current is accomplished in a manner similar to the grid control of a vacuum tube. Field-effect transistors operate more efficiently than bipolar types, because a large signal can be controlled by a very small amount of energy.
The bipolar transistor was invented in 1948 as a replacement for the triode vacuum tube. It consists of three layers of doped material, forming two p-n (bipolar) junctions with configurations of p-n-p or n-p-n. One junction is connected to a battery so as to allow current flow (forward bias), and the other junction has a battery connected in the opposite direction (reverse bias). If the current in the forward-biased junction is varied by the addition of a signal, the current in the reverse-biased junction of the transistor will vary accordingly. The principle can be used to construct amplifiers in which a small signal applied to the forward-biased junction causes a large change in current in the reverse-biased junction.
Another type of transistor is the field-effect transistor (FET). Such a transistor operates on the principle of repulsion or attraction of charges due to a superimposed electric field. Amplification of current is accomplished in a manner similar to the grid control of a vacuum tube. Field-effect transistors operate more efficiently than bipolar types, because a large signal can be controlled by a very small amount of energy.
